The MGCR080 series and MGCR120 series of Gallium Nitride Schottky Diodes, produced by Suzhou More GaN Semiconductor Technology Co., Ltd., utilize SiC-based GaN technology and have low series resistance, low junction capacitance, high breakdown voltage, and excellent heat dissipation. They can be used for high-power microwave rectification, detection, amplitude limiting, and more.